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2500
Common Emitter
300
Common Emitter
2000
Cies
V GE = 0V, f = 1MHz
T C = 25 ℃
100
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Ton
Tr
1500
1000
Coes
500
Cres
0
10
1
10
30
1
10
100
200
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
2000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Toff
1000
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Eon
Eoff
Tf
Eon
Eoff
100
Tf
100
20
50
1
10
100
200
1
10
100
200
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
200
100
Ton
Common Emitter
1000
100
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 10 ?
T C = 25 ℃
T C = 125 ℃
Toff
Tf
Toff
10
Tr
V CC = 300V, V GE = ± 15V
R G = 10 ?
T C = 25 ℃
T C = 125 ℃
20
Tf
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
?2009 Fairchild Semiconductor Corporation
SGH40N60UF Rev. C1
4
www.fairchildsemi.com
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